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| SEMICONDUCTOR TECHNICAL DATA General Description KHB7D0N65P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB7D0N65P1 A O C F E G B Q I K M L J D N N H P DIM MILLIMETERS _ 9.9 + 0.2 A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES VDSS=650V, ID=7A Drain-Source ON Resistance : RDS(ON)=1.4 @VGS=10V Qg(typ.)= 32nC 15.95 MAX 1.3+0.1/-0.05 _ 0.8 + 0.1 _ 3.6 + 0.2 _ 2.8 + 0.1 3.7 0.5+0.1/-0.05 1.5 _ 13.08 + 0.3 1.46 _ 1.4 + 0.1 _ 1.27 + 0.1 _ 2.54 + 0.2 _ 0.2 4.5 + _ 2.4 + 0.2 _ 9.2 + 0.2 MAXIMUM RATING (Tc=25 ) RATING 1. GATE 2. DRAIN 3. SOURCE P Q TO-220AB CHARACTERISTIC SYMBOL KHB7D0N65F1 UNIT KHB7D0N65P1 KHB7D0N65F2 650 30 7 7* 4.2* 28* 212 1.6 4.5 160 52 0.42 150 -55 150 mJ mJ V/ns Q KHB7D0N65F1 A F C Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 VDSS VGSS ID 4.2 IDP EAS EAR dv/dt PD 1.28 Tj Tstg 28 V V O B E G DIM MILLIMETERS A K L M J R D N N H W W/ 1 2 3 A B C D E F G H J K L M N O Q R _ 10.16 + 0.2 _ 15.87 + 0.2 _ 2.54 + 0.2 _ 0.8 + 0.1 _ 3.18 + 0.1 _ 3.3 + 0.1 _ 0.2 12.57 + _ 0.5 + 0.1 13.0 MAX _ 3.23 + 0.1 1.47 MAX 1.47 MAX _ 2.54 + 0.2 _ 6.68 + 0.2 _ 4.7 + 0.2 _ 2.76 + 0.2 1. GATE 2. DRAIN 3. SOURCE Maximum Junction Temperature Storage Temperature Range Thermal Characteristics TO-220IS (1) KHB7D0N65F2 A C F Thermal Resistance, Junction-to-Case Thermal Resistance, Case-to-Sink Thermal Resistance, Junction-to-Ambient RthJC RthCS RthJA 0.78 0.5 62.5 2.4 62.5 /W /W /W S E P DIM MILLIMETERS K * : Drain current limited by maximum junction temperature. L L R D D D N N H J PIN CONNECTION M G 1 2 3 A B C D E F G H J K L M N P Q R S _ 10.0 + 0.3 _ 15.0 + 0.3 _ 2.70 + 0.3 0.76+0.09/-0.05 _ 3.2 +0.2 _ 3.0 + 0.3 _ 12.0 + 0.3 0.5+0.1/-0.05 _ 13.6 + 0.5 _ 3.7 + 0.2 1.2+0.25/-0.1 1.5+0.25/-0.1 _ 2.54 +0.1 _ 6.8 + 0.1 _ 4.5 + 0.2 _ 2.6 + 0.2 0.5 Typ Q G B 1. GATE 2. DRAIN 3. SOURCE S TO-220IS 2007. 5. 10 Revision No : 0 1/7 KHB7D0N65P1/F1/F2 ELECTRICAL CHARACTERISTICS (Tc=25 CHARACTERISTIC ) TEST CONDITION MIN. TYP. MAX. UNIT SYMBOL Static Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Drain Cut-off Current Gate Threshold Voltage Gate Leakage Current Drain-Source ON Resistance BVDSS BVDSS/ Tj IDSS Vth IGSS RDS(ON) ID=250 A, VGS=0V ID=250 A, Referenced to 25 VDS=650V, VGS=0V, VDS=VGS, ID=250 A VGS= 30V, VDS=0V VGS=10V, ID=3.75A 650 2 0.8 1.2 10 4 100 1.4 V V/ A V nA Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay time Turn-on Rise time Turn-off Delay time Turn-off Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Ratings Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge IS VGS Note 5) Essentially independent of operating temperature. 2007. 5. 10 Revision No : 0 2/7 KHB7D0N65P1/F1/F2 Fig1. ID - VDS VGS TOP : 15.0 V 10.0 V 8.0 V 7.0 V 1 6.0 V 10 5.5 V Bottom : 5.0 V Fig2. ID - VGS Drain Current ID (A) Drain Current ID (A) 10 1 150 C 10 0 10 0 25 C -55 C 10 -1 10 0 10 1 10 -1 2 4 6 8 10 Drain - Source Voltage VDS (V) Gate - Source Voltage VGS (V) Fig3. BVDSS - Tj Normalized Breakdown Voltage BVDSS 1.2 3.0 VGS = 0V IDS = 250 Fig4. RDS(ON) - ID On - Resistance RDS(ON) () 1.1 2.5 1.0 2.0 VG = 10V 0.9 1.5 VG = 20V 0.8 -100 -50 0 50 100 150 1.0 0 5 10 15 Junction Temperature Tj ( C ) Drain Current ID (A) Fig5. IS - VSD 3.0 Fig6. RDS(ON) - Tj VGS =10V IDS = 3.75A Reverse Drain Current IS (A) 10 1 Normalized On Resistance 2.5 2.0 1.5 1.0 0.5 10 0 150 C 25 C 10 -1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.0 -100 -50 0 50 100 150 Source - Drain Voltage VSD (V) Junction Temperature Tj ( C) 2007. 5. 10 Revision No : 0 3/7 KHB7D0N65P1/F1/F2 Fig7. C - VDS 4500 4000 12 Fig8. Qg- VGS Gate - Source Voltage VGS (V) Frequency = 1MHz ID=7A VDS = 520V VDS = 325V VDS = 130V 10 8 6 4 2 0 0 4 8 12 Capacitance (pF) 3500 3000 2500 2000 1500 1000 500 0 10-1 Coss Crss Ciss 100 101 16 20 24 28 32 Drain - Source Voltage VDS (V) Gate - Charge Qg (nC) Fig9. Safe Operation Area (KHB7D0N65P1) Operation in this area is limited by RDS(ON) 100s 1ms 10ms Fig10. Safe Operation Area (KHB7D0N65F1, KHB7D0N65F2) 101 Operation in this area is limited by RDS(ON) 10 s 100s Drain Current ID (A) Drain Current ID (A) 101 1ms 100ms 100 DC 100 10 ms DC 10-1 Tc= 25 C Tj = 150 C 2 Single nonrepetitive pulse 10-1 Tc= 25 C Tj = 150 C Single nonrepetitive pulse 10 100 101 102 103 10-2 0 10 101 102 103 Drain - Source Voltage VDS (V) Drain - Source Voltage VDS (V) Fig11. ID - Tj 8 Drain Current ID (A) 6 4 2 0 25 50 75 100 125 150 Junction Temperature Tj ( C) 2007. 5. 10 Revision No : 0 4/7 KHB7D0N65P1/F1/F2 Fig12. Transient Thermal Response Curve Normalized Transient Thermal Resistance 100 Duty=0.5 0.2 10-1 PDM 0.1 0.05 t1 t2 0.02 0.01 Single Pulse - Duty Factor, D= t1/t2 10-3 10-2 10-1 100 101 10-2 10-5 10-4 TIME (sec) Fig13. Transient Thermal Response Curve Normalized Transient Thermal Resistance 100 Duty=0.5 0.2 10-1 0.1 0.05 PDM t1 t2 0.02 0.01 - Duty Factor, D= t1/t2 Single Pulse 10-2 10-5 10-4 10-3 10-2 10-1 100 101 TIME (sec) 2007. 5. 10 Revision No : 0 5/7 KHB7D0N65P1/F1/F2 Fig14. Gate Charge VGS 10 V ID Fast Recovery Diode 0.8 VDSS 1.0 mA ID Q VDS VGS Qgs Qgd Qg Fig15. Single Pulsed Avalanche Energy EAS= 1 LIAS2 2 BVDSS BVDSS - VDD BVDSS L IAS 50V 25 VDS 10 V VGS ID(t) VDD VDS(t) Time tp Fig16. Resistive Load Switching VDS 90% RL 50V 25 VDS 10V VGS VGS 10% td(off) td(on) ton tr toff tf 2007. 5. 10 Revision No : 0 6/7 KHB7D0N65P1/F1/F2 Fig17. Source - Drain Diode Reverse Recovery and dv /dt DUT VDS IF Body Diode Forword Current ISD (DUT) IRM di/dt IS Body Diode Reverse Current 0.8 VDSS VDS (DUT) driver Body Diode Recovery dv/dt VSD VDD 10V VGS Body Diode Forword Voltage drop 2007. 5. 10 Revision No : 0 7/7 |
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